Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory-Reference-Cited by-同舟云学术

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Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory

Published:2021-05 Issue:5 Volume:68 Page:1665-1669
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Yu Zhitai^ORCID,Wang Yijiao^ORCID,Zhang Zeqing,He Kuiqing,Zeng Lang,Wang Zhaohao^ORCID,Zhao Weisheng^ORCID

Funder

Joint Funds of the National Natural Science Foundation of China

National Key R&D Program of China

Beijing Municipal Science and Technology Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/9419893/09375474.pdf?arnumber=9375474

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layout Aware Optimization Methodology for SOT-MRAM Based on Technically Feasible Top-Pinned Magnetic Tunnel Junction Process;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-05

2. NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration;Science China Information Sciences;2023-02-09

3. SOT and STT Based Four-Bit Parallel MRAM Cell for High-Density Applications;IEEE Transactions on Nanotechnology;2021

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