A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$-Reference-Cited by-同舟云学术

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A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated $\pm \hbox{3.5} \ ^{\circ}\hbox{C} \ \hbox{3}\sigma$ Relative Inaccuracy From $-\hbox{55} \ ^{\circ}\hbox{C}$ to 105 $^{\circ}\hbox{C}$

Published:2013-11 Issue:11 Volume:60 Page:771-775
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Lu Li,Block Scott T.,Duarte David E.,Li Changzhi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/6663687/06619404.pdf?arnumber=6619404

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3. Attack-Resilient Temperature Sensor Design;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

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