High Field Transport in (Ultra) Wide Bandgap Semiconductors: Diamond Versus Cubic GaN-Reference-Cited by-同舟云学术

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High Field Transport in (Ultra) Wide Bandgap Semiconductors: Diamond Versus Cubic GaN

Published:2024-09 Issue:9 Volume:71 Page:5638-5644
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Jaekwon¹^ORCID,Bayram Can¹^ORCID,Leburton Jean-Pierre²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering and the Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USA

2. Department of Electrical and Computer Engineering, the Holonyak Micro and Nanotechnology Laboratory, and the Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL, USA

Funder

Advanced Research Projects Agency-Energy

Office of Naval Research

Coherent/II-VI Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10645717/10599311-aam.pdf

Reference38 articles.

1. Diamond power devices: state of the art, modelling, figures of merit and future perspective

2. Band parameters for nitrogen-containing semiconductors

3. Study of the heavily p-type doping of cubic GaN with Mg

4. Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

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