Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band-Reference-Cited by-同舟云学术

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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

Published:2024-08 Issue:8 Volume:71 Page:4524-4529
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Peña R. A.¹^ORCID,Orfao B.¹^ORCID,Íñiguez-de-la-Torre I.¹^ORCID,Paz G.¹^ORCID,Daher M. A.²^ORCID,Roelens Y.²,Zaknoune M.²,Mateos J.¹^ORCID,González T.¹^ORCID,Vasallo B. G.¹^ORCID,Pérez S.¹^ORCID

Affiliation:

1. Applied Physics Department, USAL-NANOLAB, Universidad de Salamanca, Salamanca, Spain

2. Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN), Villeneuve-d’Ascq, France

Funder

Ministerio de Ciencia, Innovación y Universidades (MICIU)/Agencia Estatal de Investigación (AEI)/10

Junta de Castilla y León and European Regional Development Fund

French Project ShoGaN

work of R

Junta de Castilla y León and European Union NextGenerationEU/PRTR through the “Investigo”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10554992.pdf?arnumber=10554992

Reference24 articles.

1. THz Diode Technology: Status, Prospects, and Applications

2. A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

3. The 2018 GaN power electronics roadmap

4. GaN Technology for Power Electronic Applications: A Review

5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

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