Transport across a high—low barrier and its influence on specific contact resistivity of a metal—n-GaAs ohmic system
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31940/01485285.pdf?arnumber=1485285
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs;Japanese Journal of Applied Physics;1996-07-15
2. The impact of the surface roughness on the electrical properties of AuGeNi/n-InP ohmic contacts;Semiconductor Science and Technology;1995-05-01
3. Transport properties of low-resistance ohmic contacts to InP;Thin Solid Films;1993-09
4. Current Transport in Low-Resistance Metal-InP Contacts;MRS Proceedings;1993
5. The use of generalised models to explain the behaviour of ohmic contacts to n-type GaAs;Solid-State Electronics;1992-12
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