New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures-Reference-Cited by-同舟云学术

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New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

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Container-title:1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual
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Author:

Wang-Ratkovic J.,Lacoe R.C.,MacWilliams K.P.,Miryeong Song ,Brown S.,Yabiku G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4455/12628/00584280.pdf?arnumber=584280

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the relation between interface trap creation and MOSFET degradation under channel hot carrier stressing at cryogenic temperatures;Japanese Journal of Applied Physics;2024-03-22

2. Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Time-to-Failure Models for Selected Failure Mechanisms in Integrated Circuits;Reliability Physics and Engineering;2018-12-21

4. Analysis of the efficiency of external cooling of slow-speed long-stroke oil-free reciprocating compressor stages with asymmetric design scheme;AIP Conference Proceedings;2018

5. Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments;IEEE Transactions on Nuclear Science;2015-06

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