Stress-induced voiding in stacked tungsten via structure-Reference-Cited by-同舟云学术

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Stress-induced voiding in stacked tungsten via structure

Published:1998 Issue: Volume: Page:
ISSN:
Container-title:1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98
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Author:

Domae S.,Masuda H.,Tateiwa K.,Kato Y.,Fujimoto M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5459/14724/00670663.pdf?arnumber=670663

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection;Thin Solid Films;2001-10

2. Impact of post via-etch cleans on mechanical reliability of W-plug vias;Thin Solid Films;2001-07

3. Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure;Thin Solid Films;2000-08

4. Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure;Thin Solid Films;2000-04

5. Electrical characteristics of silicon-nodule-related via failures observed in aluminum-silicon interconnects;Journal of Solid State Electrochemistry;2000-02-22

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