Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis-Reference-Cited by-同舟云学术

Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis

Published:2017-01 Issue:1 Volume:7 Page:138-152
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Jung Daniel H.^ORCID,Kim Youngwoo,Kim Jonghoon J.,Kim Heegon,Choi Sumin,Song Yoon-Ho,Bae Hyun-Cheol,Choi Kwang-Seong,Piersanti Stefano,de Paulis Francesco^ORCID,Orlandi Antonio^ORCID,Kim Joungho

Funder

R and D Convergence Program of the Ministry of Science ICT and Future Planning MSIP and the National Research Council of Science and Technology NST of the Republic of Korea

International Collaborative R and D Program funded by the Ministry of Trade Industry and Energy MKE Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503870/7812807/07792666.pdf?arnumber=7792666

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