A High Voltage Multi-Purpose On-the-fly Reconfigurable Half-Bridge Gate Driver for GaN HEMTs in 0.18-μm HV SOI CMOS Technology-Reference-Cited by-同舟云学术

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A High Voltage Multi-Purpose On-the-fly Reconfigurable Half-Bridge Gate Driver for GaN HEMTs in 0.18-μm HV SOI CMOS Technology

Published:2020-06 Issue: Volume: Page:
ISSN:
Container-title:2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)
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Author:

Ly Nam,Aimaier Nueraimaiti,Alameh Abdul Hafiz,Blaquiere Yves,Cowan Glenn,Constantin Nicolas G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9146023/9159756/09159781.pdf?arnumber=9159781

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An FPGA-Based On-the-Fly Reconfigurable Low-Power SHEPWM Inverter With a Compact SiP Implementation;IEEE Transactions on Power Electronics;2024-05

2. Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current;IEICE Electronics Express;2023-10-10

3. RIE-Induced VIA Defect Inspection Using In-line Voltage Contrast Technique – 0.18 µm Technology;IETE Journal of Research;2023-06-26

4. A Reconfigurable Power System-in-Package Module using GaN HEMTs and IC Bare Dies on LTCC Substrate: Design - Implementation - Experiment and Future Directions;2022 20th IEEE Interregional NEWCAS Conference (NEWCAS);2022-06-19

5. An Active Dead-Time Control Circuit With Timing Elements for a 45-V Input 1-MHz Half-Bridge Converter;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-01

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