Characterization of resistive switching phenomena in thermal silicon oxide RRAM devices by means of small-signal measurements
Author:
Affiliation:
1. Warsaw University of Technology,Centre for Advanced Materials and Technologies CEZAMAT,Warsaw,Poland
2. Warsaw University of Technology,Institute of Microelectronics and Optoelectronics,Warsaw,Poland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10366231/10366326/10366347.pdf?arnumber=10366347
Reference6 articles.
1. Resistance random access memory
2. Neuromorphic computing with multi-memristive synapses
3. Study on the Impacts of Hole Injection and Inclusion of Sub-Oxide and Metallic Si Atoms on Repeatable Resistance Switching of Sputter-Deposited Silicon Oxide Films
4. Resistive switching in silicon suboxide films
5. Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements
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