Fabrication and characterization of Al-based integrated MIS capacitors-Reference-Cited by-同舟云学术

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Fabrication and characterization of Al-based integrated MIS capacitors

Published:2023-07-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Latin American Electron Devices Conference (LAEDC)
language:
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Author:

Rocha-Aguilera Daniel¹,Ferrusca-Rodríguez Daniel²,Molina-Reyes Joel¹

Affiliation:

1. National Institute of Astrophysics, Optics and Electronics,Electronics Department, Microelectronics Group,Tonantzintla,Mexico

2. National Institute of Astrophysics, Optics and Electronics,Astronomical Instrumentation Laboratory,Astrophysics Department, Milimeter Wavelength,Tonantzintla,Mexico

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10209097/10208282/10209130.pdf?arnumber=10209130

Reference9 articles.

1. Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD

2. A Review on Conduction Mechanisms in Dielectric Films

3. Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing

4. A fast quantum mechanical algorithm for database search

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