GaN HEMTs for low-noise amplification — status and challenges-Reference-Cited by-同舟云学术

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GaN HEMTs for low-noise amplification — status and challenges

Published:2017-04 Issue: Volume: Page:
ISSN:
Container-title:2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)
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Author:

Rudolph Matthias

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7922647/7927291/07927327.pdf?arnumber=7927327

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27

2. Near-Junction Thermal Management of GaN-on-SiC MMIC Power Amplifier Through Substrate Embedded Microchannel;IEEE Transactions on Electron Devices;2024-01

3. Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications;IEEE Journal of the Electron Devices Society;2024

4. Analysis and Design of a 6-18 GHz Multi-Stage Wideband GaN LNA with 16.5 dBm OP1dB and over 42 dBm Survivability;2023 International Symposium on Electrical and Electronics Engineering (ISEE);2023-10-19

5. Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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