1. Comparison of diffusion and epitaxial methods for obtaining radiation-resistant structures of power semiconductor devices;Lozovsky;Issues of Nuclear Science and Technology. № 3,2015
2. On the stability of the process of zone melting with a temperature gradient;Lozovsky;Crystallography,1972
3. The use of thermal migration in the technology of structure of power semiconductor devices;Poluhin;Power Electronics. № 3,2006
4. Thermomigration of unoriented linear zones in silicon wafers (100) for the production of power semiconductor device chips;Poluhin;Components and technologies, №11,2008