Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate-Reference-Cited by-同舟云学术

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Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate

Published:2013-04 Issue:4 Volume:60 Page:1334-1341
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Che-Wei,Chung Cheng-Ting,Tzeng Ju-Yuan,Li Pin-Hui,Chang Pang-Sheng,Chien Chao-Hsin,Luo Guang-Li

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6482652/06482668.pdf?arnumber=6482668

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist;IEEE Transactions on Electron Devices;2015-06

2. Germanium nMOSFETs With Recessed Channel and S/D: Contact, Scalability, Interface, and Drain Current Exceeding 1 A/mm;IEEE Transactions on Electron Devices;2015-05

3. High-Performance Germanium p- and n-MOSFETs With NiGe Source/Drain;IEEE Transactions on Electron Devices;2014-08

4. Defect assessment and leakage control in Ge junctions;Microelectronic Engineering;2014-08

5. Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology;IEEE Transactions on Electron Devices;2014-07

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