Author:
Alsharef Mohamed A.,Granzner Ralf,Schwierz Frank
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
33 articles.
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1. On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls;Applied Physics Letters;2024-08-05
2. Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30
4. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-02-16
5. Study and Analysis of Electrical Behavior for ZnTe/InSb Heterojunction;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24