Demonstration of PtMn-based Field-free Switching SOT MRAM-Reference-Cited by-同舟云学术

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Demonstration of PtMn-based Field-free Switching SOT MRAM

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
language:
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Author:

Lin Chia-Ping¹,Tseng Chih-Hsiang²,Yen Yu-Shen²,Lai Chih-Huang²,Li Kai-Shin³,Shieh Jia-Min³,Sun Jack Yuan-Chen³,Wei Jeng-Hua⁴,Tang Denny D.⁴

Affiliation:

1. National Tsing Hua University,College of Semiconductor Research,Hsinchu,Taiwan

2. National Tsing Hua University,Department of Materials Science and Engineering,Hsinchu,Taiwan

3. Taiwan Semiconductor Research Institute,Hsinchu,Taiwan

4. Industrial Technology Research Institute,Electronics and Optoelectronics Research Laboratories,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228584.pdf?arnumber=10228584

Reference7 articles.

1. First demonstration of interface-enhanced SAF enabling 400° C-robust 42 nm p-SOT-MTJ cells with STT-assisted field-free switching and composite channels;tsou;2021 Symposium on VLSI Technology,2021

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

4. Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

5. Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks

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