A High-performance and Calibration-free True Random Number Generator Based on the Resistance Perturbation in RRAM Array
Author:
Affiliation:
1. Tsinghua University,Institute of Microelectronic, Beijing Innovation Center for Future Chips (ICFC),Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371891.pdf?arnumber=9371891
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A High-Speed True Random Number Generator Based on Unified Selector-RRAM;IEEE Electron Device Letters;2023-12
2. A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory;IEEE Transactions on Electron Devices;2023-08
3. Uncertainty quantification via a memristor Bayesian deep neural network for risk-sensitive reinforcement learning;Nature Machine Intelligence;2023-06-22
4. A 2.22 Mb/s True Random Number Generator Based on a GeTex Ovonic Threshold Switching Memristor;IEEE Electron Device Letters;2023-05
5. A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security;IEEE Transactions on Electron Devices;2022-02
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