Single-Electron Transistor Based Implementation of NOT, Feynman, and Toffoli Gates-Reference-Cited by-同舟云学术

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Single-Electron Transistor Based Implementation of NOT, Feynman, and Toffoli Gates

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Symposium on Multiple-Valued Logic
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Author:

Khan Mozammel H.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7217067/7238112/07238134.pdf?arnumber=7238134

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Energy in the Coulomb Island of Single Electron Transistor;2022 International Conference on Recent Progresses in Science, Engineering and Technology (ICRPSET);2022-12-26

2. A Single Electron Transistor-Based Floating Point Multiplier Realization at Room Temperature Operation;Lecture Notes in Electrical Engineering;2022-12-04

3. All-Optical Feynman Gate Using Frequency Encoding Scheme, Add/Drop Multiplexer and Reflective Semiconductor Optical Amplifier with Simulative Verification;Advances in Communication, Devices and Networking;2022-08-30

4. Compact D Flip Flop in Quantum Dot Cellular Automata for Digital System;2022 6th International Conference On Computing, Communication, Control And Automation (ICCUBEA;2022-08-26

5. All-optical dibit-based Feynman gate using reflective semiconductor optical amplifier with frequency encoding scheme;Journal of Optics;2022-05-16

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