Comments, with reply, on 'Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection' by B. Boukriss et al
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Published:1990-03
Issue:3
Volume:11
Page:129-130
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials