Optimized Design for 4H-SiC Power DMOSFET
Author:
Affiliation:
1. Department of Industrial Engineering, University of Salerno, Fisciano, Italy
2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/7605558/07576683.pdf?arnumber=7576683
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