Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration-Reference-Cited by-同舟云学术

Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration

Published:2022-03-06 Issue: Volume: Page:
ISSN:
Container-title:2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Frank Martin M.¹,Cartier Eduard A.¹,Lavoie Christian¹,Carr Adra²,Jordan-Sweet Jean L.¹,Jamison Paul C.²,Gluschenkov Oleg²,Rozen John¹,Narayanan Vijay¹

Affiliation:

1. IBM Research,Yorktown Heights,NY,USA

2. IBM Research,Albany,NY,USA

Funder

Los Alamos National Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798111.pdf?arnumber=9798111

Reference19 articles.

1. Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis

2. Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

3. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

4. Effect of La and Y on Crystallization Temperatures of Hafnia and Zirconia

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