The Pursuit of Atomistic Switching and Cross Point Memory-Reference-Cited by-同舟云学术

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The Pursuit of Atomistic Switching and Cross Point Memory

Published:2021-04-19 Issue: Volume: Page:
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Container-title:2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Kau Der Chang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9440054/9440040/09440112.pdf?arnumber=9440112

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy;Journal of Materials Science: Materials in Electronics;2023-10

2. Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector With a Ge Intercalated Structure;IEEE Electron Device Letters;2023-07

3. Amorphous Ge-Se-S chalcogenide alloys via post plasma sulfurization of atomic layer deposition GeSe for ovonic threshold switch applications;Journal of Alloys and Compounds;2023-06

4. Impact of process-induced variability on multi-bit phase change memory devices;Microelectronics Journal;2022-12

5. Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications ;IEEE Transactions on Electron Devices;2022-11

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