CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations-Reference-Cited by-同舟云学术

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CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations

Published:2021-09 Issue:3 Volume:21 Page:436-443
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Taghipour Shiva^ORCID,Kamal Mehdi^ORCID,Asli Rahebeh Niaraki,Afzali-Kusha Ali^ORCID,Pedram Massoud^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/9528863/09514532.pdf?arnumber=9514532

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design-for-Test for Intermittent Faults in STT-MRAMs;2024 IEEE European Test Symposium (ETS);2024-05-20

2. Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs;2023 IEEE International Test Conference (ITC);2023-10-07

3. H²C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs;IEEE Transactions on Device and Materials Reliability;2023-06

4. LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations;IEEE Transactions on Device and Materials Reliability;2022-12

5. DFT-Enhanced Test Scheme for Spin-Transfer-Torque (STT) MRAMs;2022 IEEE International Test Conference (ITC);2022-09

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