Author:
Gerardin Simone,Bagatin Marta,Ferrario Alberto,Paccagnella Alessandro,Visconti Angelo,Beltrami Silvia,Andreani Carla,Gorini Giuseppe,Frost Christopher D.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials
Cited by
16 articles.
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1. Impact of Tier Pitch Scaling on Heavy-Ion Sensitivity of 3-D NAND Flash Memories;IEEE Transactions on Nuclear Science;2024-08
2. Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells;IEEE Transactions on Nuclear Science;2023
3. New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory;IEEE Transactions on Device and Materials Reliability;2022-09
4. Cosmic rays;Proceedings of the 15th International Conference on Availability, Reliability and Security;2020-08-25
5. Thermal Neutron-Induced SEUs in the LHC Accelerator Environment;IEEE Transactions on Nuclear Science;2020-07