Physics-Based Models for EM and SM Simulation in Three-Dimensional IC Structures

Author:

Sukharev Valeriy1,Kteyan Armen2,Zschech Ehrenfried3

Affiliation:

1. Mentor Graphics Corporation, Fremont, CA, USA

2. Mentor Graphics Corporation, Yerevan, Armenia

3. Fraunhofer Institute for Nondestructive Testing (IZFP), Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis;Microelectronics Reliability;2024-03

2. EMSpice: Physics-Based Electromigration Check Using Coupled Electronic and Stress Simulation;IEEE Transactions on Device and Materials Reliability;2020-06

3. Accelerating Electromigration Aging: Fast Failure Detection for Nanometer ICs;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2020-04

4. Electronic Design Automation for 3D;Handbook of 3D Integration;2019-02-08

5. Multi-physics-based FEM analysis for post-voiding analysis of electromigration failure effects;Proceedings of the International Conference on Computer-Aided Design;2018-11-05

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