Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology-Reference-Cited by-同舟云学术

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Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology

Published:2014-01 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
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Author:

Dennler Philippe¹,Quay Rudiger¹,Bruckner Peter¹,Schlechtweg Michael¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institute for Applied Solid-State Physics, Tullastr. 72, D-79108 Freiburg, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6822752/6825714/06825727.pdf?arnumber=6825727

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C/Ka Concurrent Dual-Band GaN MMIC Based on Shorted Quarter-Wavelength Line Topology;IEEE Journal of Microwaves;2024-07

2. AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz;IEEE Electron Device Letters;2023-01

3. A complete small‐signal model of GaAs dual‐gate HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-07

4. Broadband Amplifier Design Technique by Dissipative Matching Networks;IEEE Transactions on Circuits and Systems I: Regular Papers;2021-01

5. A Millimeter-wave Ultra-Wideband Non-Uniform Distributed Power Amplifier with Improved Efficiency;2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT);2020-08-29

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