1.0 THz f<inf>max</inf> InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance-Reference-Cited by-同舟云学术

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Published:2011-06 Issue: Volume: Page:
ISSN:
Container-title:69th Device Research Conference
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Author:

Jain Vibhor,Rode Johann C.,Chiang Han-Wei,Baraskar Ashish,Lobisser Evan,Thibeault Brian J.,Rodwell Mark,Urteaga Miguel,Loubychev D.,Snyder A.,Wu Y.,Fastenau J. M.,Liu W.K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5981430/5994397/05994528.pdf?arnumber=5994528

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction bipolar transistors for sub-THz applications;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. InP DHBT Linear Modulator Driver With a 3-Vppd PAM-4 Output Swing at 90 GBaud: From Enhanced Transistor Modeling to Integrated Circuit Design;IEEE Transactions on Microwave Theory and Techniques;2023

3. THz Sources and Related Topics;Introduction to Terahertz Electronics;2020-10-02

4. High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors;ACS Applied Electronic Materials;2019-10-10

5. Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology;International Journal of Microwave and Wireless Technologies;2019-05-03

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