Revolutionizing High Power Electronics: GaN-Based-TFET as the Next Frontier-Reference-Cited by-同舟云学术

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Revolutionizing High Power Electronics: GaN-Based-TFET as the Next Frontier

Published:2024-03-11 Issue: Volume:18 Page:919-924
ISSN:
Container-title:2024 5th International Conference on Intelligent Communication Technologies and Virtual Mobile Networks (ICICV)
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Author:

VP Kavitha¹,V Magesh²,G Theivanathan²,G Jayandhi³

Affiliation:

1. SRM Institute of Science and Technology,Faculty of Engineering and Technology,Department of ECE,Chennai,India

2. Velammal Engineering College,Department of ECE,Chennai,India

3. Saveetha School of Engineering, Saveetha University,Department of ECE,Chennai,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511072/10511073/10511205.pdf?arnumber=10511205

Reference20 articles.

1. Switching performance assessment of gate-aIl-around InAs-Si vertical TFET with a triple metal gate, a simulation study;Madadi,2023

2. Vertically-Grown TFETs: An Extensive;George;Improved performance of junctionless tunnel field effect transistor with Si and SiGe heterostructure for ultra-low power applications,2023

3. Comprehensive Analysis of DG-TFET with Ferro Electric Material

4. Tunnel field effect transistor device structures: A comprehensive review

5. Triple Metal Extended Source Double Gate Vertical TFET with Boosted DC and Analog/RF Performance for Low Power Applications;Karmakar,2022

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