Modeling the Tunnel Field-Effect Transistor Based on Different Tunneling Path Approaches

Author:

Wisniewski PiotrORCID,Majkusiak BogdanORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Advanced Tunnel Field-Effect Transistors with Multi-gate and Pocket-Doping Technology;Handbook of Emerging Materials for Semiconductor Industry;2024

2. Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL;Semiconductor Science and Technology;2022-09-30

3. Nonconventional Heterostructure Tunnel FET for Sensitive Tera Hertz Detection;Terahertz Wireless Communication Components and System Technologies;2022

4. Novel InAs/Si Heterojunction Dual-Gate Triple Metal P-i-N Tunneling Graphene Nanoribbon Field Effect Transistοr (DG-TM-TGNFET) Fοr High-Frequency Applicatiοns;Lecture Notes in Electrical Engineering;2021-09-22

5. Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-03-15

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