Chip-Level Electrothermal Stress Calculation Method of High-Power IGBT Modules in System-Level Simulation
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9780877/09744539.pdf?arnumber=9744539
Reference41 articles.
1. A Novel Approach to Model and Analyze Uneven Temperature Distribution Among Multichip High-Power Modules and Corresponding Method to Respecify Device SOA
2. Influence of Paralleling Dies and Paralleling Half-Bridges on Transient Current Distribution in Multichip Power Modules
3. A simple power diode model with forward and reverse recovery
4. A New Lumped-Charge Modeling Method for Power Semiconductor Devices
5. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models
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