Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model-Reference-Cited by-同舟云学术

Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model

Published:2023-02 Issue:2 Volume:38 Page:1806-1818
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang Yi¹,Xu Wenzhe¹^ORCID,Xie Yue¹^ORCID,Liu Teng¹^ORCID,Wu Zongheng¹,Chen Cai¹^ORCID,Kang Yong¹,Peng Han¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9952160/09931465.pdf?arnumber=9931465

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5. A Gate Driver with Integrated Dead-Time Controller

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