AlInN/GaN a suitable HEMT device for extremely high power high frequency applications-Reference-Cited by-同舟云学术

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AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE/MTT-S International Microwave Symposium
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Author:

Gaquiere C.,Medjdoub F.,Carlin J.-F.,Vandenbrouck S.,Delos E.,Feltin E.,Grandjean N.,Kohn E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4263706/4263707/04264295.pdf?arnumber=4264295

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02

2. Growth of InAlN/GaN Heterostructures by Pulsed MOCVD;Nitride Wide Bandgap Semiconductor Material and Electronic Devices;2016-10-14

3. Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors;Journal of Applied Physics;2009-12-15

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