Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications-Reference-Cited by-同舟云学术

Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Ghandi R.¹,Hitchcock C.¹,Kennerly S.¹,Torky M.²,Chow T.P.²

Affiliation:

1. GE Research,Niskayuna,NY,USA,12309

2. Rensselaer Polytechnic Institute,Troy,NY,USA,12180

Funder

Advanced Research Projects Agency

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019368.pdf?arnumber=10019368

Reference12 articles.

1. First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method;tanaka;2018 IEEE Int Electron Devices Meet,2019

2. A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

3. Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

4. Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

5. Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures;Defect and Diffusion Forum;2024-08-22

2. Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices;IEEE Transactions on Nuclear Science;2024-08

3. Research of over-2kV, 2.35GW/cm² β-Ga₂O₃ Vertical Superjunction Schottky Barrier Diodes;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09

4. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01

5. Charge Imbalance Tolerance of 4H-SiC Superjunction Devices Featuring Breakdown Path Variation;IEEE Electron Device Letters;2023-07