Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application-Reference-Cited by-同舟云学术

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Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Circuits (VLSI Circuits)
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Author:

Hayakawa Y.,Himeno A.,Yasuhara R.,Boullart W.,Vecchio E.,Vandeweyer T.,Witters T.,Crotti D.,Jurczak M.,Fujii S.,Ito S.,Kawashima Y.,Ikeda Y.,Kawahara A.,Kawai K.,Wei Z.,Muraoka S.,Shimakawa K.,Mikawa T.,Yoneda S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7196579/7231231/07231381.pdf?arnumber=7231381

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4. Neuromorphic System Using Crosspoint-Type TaO _x /Ta Memristors and Direct Device Training for Associative Memory;IEEE Transactions on Electron Devices;2023-09

5. Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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