A Single-Ended Read Decoupled 9T SRAM Cell for Low Power Applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8293729/8293882/08293934.pdf?arnumber=8293934
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhanced 11-Transistor SRAM Cell with Half Select Disturb-Free Operation for High Performance Systems;2024 3rd International Conference on Artificial Intelligence For Internet of Things (AIIoT);2024-05-03
2. Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology;ACM Transactions on Design Automation of Electronic Systems;2023-10-28
3. Schmitt-Trigger-Based Low Power SRAM Implemented Using 45-nm CMOS Technology;2023 IEEE Region 10 Symposium (TENSYMP);2023-09-06
4. Stability and Power Analysis of Schmitt Trigger Based Low Power SRAM Bit-Cell Using CMOS and CNTFET Technology at 22nm Technology Node;Key Engineering Materials;2023-05-19
5. Design and Implementation of CNFET SRAM Cells by Using Multi-Threshold Technique;Electronics;2023-03-29
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