80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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80-GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors

Published:1998 Issue:12 Volume:46 Page:2302-2307
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Agarwal B.,Lee Q.,Mensa D.,Pullela R.,Guthrie J.,Rodwell M.J.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx4/22/15966/00739215.pdf?arnumber=739215

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation;IEEE Transactions on Electron Devices;2006-02

2. 60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz;IEEE Journal of Solid-State Circuits;2005-02

3. 50-GHz SiGe HBT Distributed Amplifiers Employing Constant-<tex>$k$</tex>and<tex>$m$</tex>-Derived Filter Sections;IEEE Transactions on Microwave Theory and Techniques;2004-05

4. Impact of light illumination and passivation layer on silicon finite-ground coplanar-waveguide transmission-line properties;IEEE Transactions on Microwave Theory and Techniques;2000

5. A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain;IEEE Microwave and Guided Wave Letters;1999

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