Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges-Reference-Cited by-同舟云学术

Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
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Author:

Lee Jae-Gil¹,Kim Joongsik¹,Suh Dong Ik¹,Kim Ildo¹,Han Gwon Deok¹,Ryu Seung Wook¹,Lee Seho¹,Na Myung-Hee¹,Cha Seon Yong¹,Park Hyeon Woo²,Hwang Cheol Seong²

Affiliation:

1. SK hynix Inc.,Icheon,Gyeonggi-do,Republic of Korea

2. Seoul National University,Materials Science and Engineering,Seoul,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779292.pdf?arnumber=9779292

Reference5 articles.

1. Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

2. Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer

3. A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

4. The Inlaid Al2O3Tunnel Switch for Ultrathin Ferroelectric Films

5. Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

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