High temperature stability embedded ReRAM for 2x nm node and beyond

Author:

Molas G.1,Piccolboni G.1,Bricalli A.1,Verdy A.1,Naot I.1,Cohen Y.1,Regev A.1,Naveh I.1,Deleruyelle D.2,Rafhay Q.3,Castellani N.4,Reganaz L.4,Persico A.4,Segaud R.4,Nodin J. F.4,Meli V.4,Martin S.4,Andrieu F.4,Grenouillet L.4

Affiliation:

1. Weebit Nano Ltd

2. INSA Lyon, INL, UMR5270,Villeurbanne,France,69621

3. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INO, IMEP-LAHC,Grenoble,France,38000

4. CEA, LETI, MINATEC Campus,GRENOBLE,France

Publisher

IEEE

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro;IEEE Journal of Solid-State Circuits;2024-09

2. In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives;IEEE Transactions on Electron Devices;2024-04

3. Synaptic metaplasticity with multi-level memristive devices;2023 IEEE 5th International Conference on Artificial Intelligence Circuits and Systems (AICAS);2023-06-11

4. The gap between academia and industry in resistive switching research;Nature Electronics;2023-04-24

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