A Full-Stack View of Probabilistic Computing With p-Bits: Devices, Architectures, and Algorithms-Reference-Cited by-同舟云学术

A Full-Stack View of Probabilistic Computing With p-Bits: Devices, Architectures, and Algorithms

Published:2023-06 Issue:1 Volume:9 Page:1-11
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Chowdhury Shuvro¹^ORCID,Grimaldi Andrea²^ORCID,Aadit Navid Anjum¹^ORCID,Niazi Shaila¹^ORCID,Mohseni Masoud³^ORCID,Kanai Shun⁴^ORCID,Ohno Hideo⁴^ORCID,Fukami Shunsuke⁴^ORCID,Theogarajan Luke¹^ORCID,Finocchio Giovanni²^ORCID,Datta Supriyo⁵^ORCID,Camsari Kerem Y.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA

2. Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina, Italy

3. Google Quantum AI, Venice, CA, USA

4. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

5. Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

Funder

U.S. National Science Foundation

Office of Naval Research Young Investigator

Semiconductor Research Corporation

Japan Science and Technology Agency (JST)-PRESTO

JST-CREST

MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers

“The Italian Factory of Micromagnetic Modeling and Spintronics”

Italian Ministry of University and Research

Petaspin Association

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/6570653/10138050/10068500-aam.pdf

Reference133 articles.

1. 1 Gbit high density embedded STT-MRAM in 28 nm FDSOI technology;lee;IEDM Tech Dig,2019

2. Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications

3. The strong sensitivity of the characteristics of binary stochastic neurons employing low barrier nanomagnets to small geometrical variations;rahman;arXiv 2108 04319,2021

4. Reliability and Scalability of p-Bits Implemented With Low Energy Barrier Nanomagnets

5. High Convergence Rates of CMOS Invertible Logic Circuits Based on Many-Body Hamiltonians

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