Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128223.pdf?arnumber=9128223
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements;Solid State Phenomena;2024-08-26
2. Preconditioning for Accurate Threshold Voltage Extraction of SiC MOSFETs after AC Bias Temperature Instability in Reliability Tests;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs;IEEE Transactions on Industrial Electronics;2024-05
4. Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs;Materials Science in Semiconductor Processing;2024-05
5. On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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