Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors-Reference-Cited by-同舟云学术

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Published:2017-03 Issue:3 Volume:64 Page:1026-1031
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Okita Hideyuki^ORCID,Hikita Masahiro,Nishio Akihiko,Sato Takahiro,Matsunaga Keiichi,Matsuo Hisayoshi,Tsuda Michinobu,Mannoh Masaya,Kaneko Saichiro,Kuroda Masayuki,Yanagihara Manabu,Ikoshi Ayanori,Morita Tatsuo,Tanaka Kenichiro,Uemoto Yasuhiro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7862872/07845554.pdf?arnumber=7845554

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