A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology-Reference-Cited by-同舟云学术

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A Reliable and Energy-Efficient Nonvolatile Ternary Memory Based on Hybrid FinFET/RRAM Technology

Published:2022 Issue: Volume:10 Page:105040-105051
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Yousefi Aram¹,Eslami Nima¹,Moaiyeri Mohammad Hossein¹^ORCID

Affiliation:

1. Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, Iran

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09912383.pdf?arnumber=9912383

Reference38 articles.

1. Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

2. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

3. The missing memristor found

4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-X/TaO2-X bilayer structures;lee;Nature Mater,2011

5. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

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