A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor-Reference-Cited by-同舟云学术

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A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor

Published:2010-11 Issue:6 Volume:9 Page:723-733
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Kaushal Vikas,Iñiguez-de-la-Torre Ignacio,Irie Hiroshi,Guarino Gregg,Donaldson William R.,Ampadu Paul,Sobolewski Roman,Margala Martin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/5623288/05464278.pdf?arnumber=5464278

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates;Chinese Journal of Physics;2024-08

2. A Novel Terahertz Ballistic Deflection Transistor Travelling Wave Amplifier System;IEEE Transactions on Circuits and Systems II: Express Briefs;2018-10

3. A Design of Terahertz Parallel Plate Dielectric Waveguide with Signal Line inserted for Ballistic Deflection Transistor Travelling Wave Amplifier;Journal of Physics: Conference Series;2017-10

4. Design and Analysis of High Performance Ballistic Nanodevice-Based Sequential Circuits Using Monte Carlo and Verilog AMS Simulations;IEEE Transactions on Circuits and Systems I: Regular Papers;2016-12

5. Modeling and Study of Two-BDT-Nanostructure based Sequential Logic Circuits;Proceedings of the 26th edition on Great Lakes Symposium on VLSI;2016-05-18

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