High performance Schottky barrier MOSFETs on UTB SOI
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4832838/4897524/04897540.pdf?arnumber=4897540
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology;Surface Engineering and Applied Electrochemistry;2015-03
2. Effect of thermal annealing and cooling conditions of P-doped n-Si crystals on the temperature dependences of the charge carrier mobility in the impurity scattering region;Surface Engineering and Applied Electrochemistry;2013-11
3. Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation;Solid-State Electronics;2010-09
4. Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation;Journal of Applied Physics;2010-02-15
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