Impact of dielectric material and oxide thickness on the performance of Carbon Nanotube Field Effect Transistor
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8103843/8117249/08117461.pdf?arnumber=8117461
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantum Insights into Dielectric Materials and Oxide Thickness-Dependent Conductance in Single-Walled CNTFET: A Parametric Simulation Study;2024 International Conference on Advances in Computing, Communication, Electrical, and Smart Systems (iCACCESS);2024-03-08
2. Characterizing CNTFET Logic Gate and Adder Performance Trade-offs by considering CNT Tube Diameter and Dielectric Constant;2023 IEEE 9th International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE);2023-11-25
3. Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET;2023-08-07
4. Implementation of Carbon Nanotube Field Effect Transistor and Comparison of Insulator Material With Traditional Silicon Gate Oxides to Improve the Electrical Characteristics and Device Scalability;2023 2nd International Conference on Vision Towards Emerging Trends in Communication and Networking Technologies (ViTECoN);2023-05-05
5. Parameterized Comparison of Carbon Nanotube and Graphene Nanoribbon Field Effective Transistor;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28
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