A model for shifts in the gate turn-on voltage of insulated-gate field-effect devices induced by ionizing radiation-Reference-Cited by-同舟云学术

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A model for shifts in the gate turn-on voltage of insulated-gate field-effect devices induced by ionizing radiation

Published:1967-03 Issue:3 Volume:14 Page:134-138
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Stanley A.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31631/01474636.pdf?arnumber=1474636

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling;Russian Microelectronics;2006-09

4. Effects of hydrogen chloride on boron acceptor hydrogenation and trap generation‐annealing in oxidized silicon irradiated by keV electrons;Journal of Applied Physics;1988-05

5. Radiation Damage;Semiconducting Devices;1976

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