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Structure Optimization of Trench-Isolated SiGe HBTs for Simultaneous Improvements in Thermal and Electrical Performances

  • Published:2005-12 Issue:12 Volume:52 Page:2744-2752
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:en
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Rieh J.-S.,Greenberg D.,Liu Q.,Joseph A.J.,Freeman G.,Ahlgren D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isothermal Characterization and Thermal Resistance Extraction in SiGe HBTs using Single Pulse Measurement;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Electro-Thermal Investigation of SiGe HBTs: A Review;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Improving the thermal ruggedness of GaAs HBTs through nonuniform base ballasting optimization;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27

4. A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches;Electronics;2023-08-16

5. Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe HBTs;IEEE Transactions on Electron Devices;2023-03
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