Lateral n-channel inversion mode 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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Lateral n-channel inversion mode 4H-SiC MOSFETs

Published:1998-07 Issue:7 Volume:19 Page:228-230
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sridevan S.,Jayant Baliga B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/55/15090/00701425.pdf?arnumber=701425

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1. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface;Japanese Journal of Applied Physics;2024-01-30

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4. Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains;IEEE Transactions on Power Electronics;2022-01

5. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26

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