Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection-Reference-Cited by-同舟云学术

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

Author:

Meng Xianwei¹^ORCID,Zhang Meng¹^ORCID,Duan Kun¹^ORCID,Zheng Xiang²^ORCID,Zhai Yuwei³^ORCID,Feng Shiwei¹^ORCID,Zhang Yamin¹^ORCID

Affiliation:

1. Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China

2. Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K

3. Metrology and Maintenance Department, Hebei Semiconductor Research Institute, Shijiazhuang, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Beijing Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

Reference31 articles.

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