A 42.5–51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator
Author:
Affiliation:
1. Georgia Institute of Technology,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332
2. Georgia Tech Research Institute,Atlanta,GA,USA
Funder
Raytheon Technologies
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051694.pdf?arnumber=10051694
Reference12 articles.
1. A 6-31 GHz Tunable Reflection-Mode N-Path Filter
2. An N-path bandpass filter with a tuning range of 0.1–12 GHz and stopband rejection > 20 dB in 32 nm SOI CMOS
3. A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs
4. A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology
5. A Millimeter-Wave, Transformer-Based, SiGe Distributed Attenuator
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1. Multi-Functional Single/Multi-Band Bandpass Filters With Co-Integrated RF Isolator, Variable Phase Shifter or Variable Attenuator Functionalities;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-09
2. Direct Synthesis of Continuously Tunable Wideband Bandpass Filtering Attenuator With Multiple Transmission Zeros;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09
3. Design of Multifunctional Bandpass Filter with Tunable Attenuation and Reflectionless Behavior;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
4. RF Co-Designed High-Selectivity Bandpass Filter/Attenuator (BPFA) With Tunable Attenuation;2024 IEEE International Microwave Filter Workshop (IMFW);2024-02-21
5. Two proposed BiCMOS inverters with enhanced performance;Ain Shams Engineering Journal;2024-01
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